Title :
RF MOSFETs noise modeling-the wave approach
Author :
O.R. Pronic;V.V. Markovic
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
fDate :
6/25/1905 12:00:00 AM
Abstract :
This paper presents a new procedure for noise modeling of microwave MOSFETs based on the wave approach. The procedure is based on circuit theory concepts and on similar kind of analysis we proposed earlier for MESFETs/HEMTs noise modeling. Noise wave parameters are derived in terms of three equivalent noise temperatures. Noise parameter characteristics obtained by proposed modeling procedure are compared with the measured ones for a typical RF MOSFET.
Keywords :
"Radio frequency","MOSFETs","Circuit noise","Semiconductor device noise","MESFETs","CMOS technology","Temperature","Noise measurement","Equivalent circuits","HEMTs"
Conference_Titel :
Telecommunications in Modern Satellite, Cable and Broadcasting Service, 2003. TELSIKS 2003. 6th International Conference on
Print_ISBN :
0-7803-7963-2
DOI :
10.1109/TELSKS.2003.1246290
