DocumentCode :
3614814
Title :
Simulations of GaAs voltage controlled differential ring oscillators
Author :
V. Ceperic;A. Baric
Author_Institution :
Fac. of Electr. Eng. & Comput., Zagreb Univ., Croatia
Volume :
1
fYear :
2003
fDate :
6/25/1905 12:00:00 AM
Firstpage :
151
Abstract :
This paper describes the simulations performed in order to evaluate expected performance of the voltage-controlled oscillator (VCO) based on differential ring oscillator with SCFL (source coupled FET logic) delay cells in the 0.5-/spl mu/m GaAs MESFET technology. The ring oscillator structures with buffer cells are also simulated. The frequency range and tuning sensitivity are extracted. Finally, jitter simulations are performed in order to assess the sensitivity of various VCO configurations to the power supply variations.
Keywords :
"Gallium arsenide","Voltage-controlled oscillators","Voltage control","Ring oscillators","Performance evaluation","FETs","Logic","Delay","MESFETs","Frequency"
Publisher :
ieee
Conference_Titel :
EUROCON 2003. Computer as a Tool. The IEEE Region 8
Print_ISBN :
0-7803-7763-X
Type :
conf
DOI :
10.1109/EURCON.2003.1247999
Filename :
1247999
Link To Document :
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