Title :
Study of silicon plasma produced by nitrogen laser
Author :
S. Pleslic;Z. Andreic
Author_Institution :
Dept. of Appl. Phys., Zagreb Univ., Croatia
fDate :
6/25/1905 12:00:00 AM
Abstract :
Experimental investigation of laser-produced plasma of silicon is described in this work. Plasma was produced by nanosecond (6 ns) nitrogen laser pulses (337.1 nm) with maximal energy density of about 1.1 J/cm/sup 2/ and studied by UV-VIS spectroscopy. Electron density of the order of magnitude of 10/sup 18/ cm/sup -3/ and electron temperature of about 1.5 eV were achieved in produced plasma. Numerical modelling of target heating predicts 4-5 times higher electron temperature than experimentally determined ones. The optical depth of particular material is main parameter for plasma production.
Keywords :
"Silicon","Nitrogen","Plasma density","Plasma temperature","Electrons","Plasma materials processing","Optical pulses","Spectroscopy","Predictive models","Numerical models"
Conference_Titel :
Applied Electromagnetics and Communications, 2003. ICECom 2003. 17th International Conference on
Print_ISBN :
953-6037-39-4
DOI :
10.1109/ICECOM.2003.1291010
