Title :
Novel electronic and optoelectronic properties of GaInNAs and related alloys
Author :
E.P. O´Reilly;S. Fahy;A. Lindsay;S. Tomic;R. Fehse;A.R. Adams;S.J. Sweeney;A.D. Andreev;P.J. Klar;H. Gruning;H. Riechert
Author_Institution :
NMRC, Univ. Coll., Cork, Ireland
fDate :
6/25/1905 12:00:00 AM
Abstract :
We overview how the novel electronic structure of dilute nitride alloys modifies the gain characteristics of GaInNAs lasers. Optimised devices should have comparable or better characteristics than InP-based emitters, enabling GaAs-based 1.3 /spl mu/m vertical emitting lasers.
Keywords :
"Laser theory","Gallium arsenide","Threshold current","Quantum well lasers","Nitrogen","Stimulated emission","Ultraviolet sources","Photonic band gap","Laser modes","Resonance"
Conference_Titel :
Lasers and Electro-Optics, 2003. CLEO ´03. Conference on
Print_ISBN :
1-55752-748-2
