3D simulation of cross-shaped Hall sensor and its equivalent circuit model

The complete technology process flow and electrical characteristics of cross-shaped Hall sensor in high voltage bulk CMOS technology have been accurately simulated in 2D and 3D using ISE TCAD system. Consistent 3D doping profile is obtained by interpolation, exchanging data between several 2D doping profiles. In order to facilitate the analysis of an electrical circuit incorporating a Hall sensor, an appropriate equivalent circuit model of cross-shaped Hall sensor with voltage control non-linear resistors is suggested. Finally, the results acquired by 3D electrical characteristic simulations using ISE tool DESSIS and equivalent-circuit analyses using program SPICE are compared.