A novel SPICE macromodel of BJTs including the temperature dependence of high-injection effects

In this work a novel steady-state ABM-based BJT macromodel is presented, which can be successfully adopted for accurately describing the electrothermal behavior of devices consisting of several elementary transistors connected in parallel. As an enhancement with respect to other approaches, the temperature dependence of the onset of high-injection effects is taken into account, which implies a complete description of possible electrothermal stabilizing mechanisms at high-current regimes.