Experimental and theoretical study of the I-V bistabilities of resonant tunneling diodes

Both experimental and theoretical analysis of DC behavior of resonant tunneling diodes is presented. Own set of GaAs/GaAlAs RTD´s is prepared by MBE technique. The height of the barriers and width of the barriers and of the well is changed. The I-V characteristics are measured at different temperatures. Calculations are performed by the Wingreen simulator. The own theoretical model based on the transfer matrix method is developed. It provides relatively fast and reliable results for the analysis of the RTD structure and behavior.