DocumentCode
3615851
Title
Evaluation of power cut-off techniques in the presence of gate leakage
Author
M. Drazdziulis;P. Larsson-Edefors
Author_Institution
Dept. of Comput. Eng., Chalmers Univ. of Technol., Goteborg, Sweden
Volume
2
fYear
2004
fDate
6/26/1905 12:00:00 AM
Lastpage
745
Abstract
We consider gate leakage next to subthreshold leakage currents in power-saving techniques for future CMOS circuits. Two recently introduced power cut-off techniques are analyzed and compared with respect to the total leakage current using Berkeley PTM. The results show that the efficiency of techniques having logic circuits alternately connected to external supply and ground can drastically degrade when gate tunneling currents become significant.
Keywords
"Gate leakage","Leakage current","Tunneling","Subthreshold current","Power dissipation","CMOS technology","Logic circuits","MOSFETs","Insulation","Electrons"
Publisher
ieee
Conference_Titel
Circuits and Systems, 2004. ISCAS ´04. Proceedings of the 2004 International Symposium on
Print_ISBN
0-7803-8251-X
Type
conf
DOI
10.1109/ISCAS.2004.1329379
Filename
1329379
Link To Document