• DocumentCode
    3615851
  • Title

    Evaluation of power cut-off techniques in the presence of gate leakage

  • Author

    M. Drazdziulis;P. Larsson-Edefors

  • Author_Institution
    Dept. of Comput. Eng., Chalmers Univ. of Technol., Goteborg, Sweden
  • Volume
    2
  • fYear
    2004
  • fDate
    6/26/1905 12:00:00 AM
  • Lastpage
    745
  • Abstract
    We consider gate leakage next to subthreshold leakage currents in power-saving techniques for future CMOS circuits. Two recently introduced power cut-off techniques are analyzed and compared with respect to the total leakage current using Berkeley PTM. The results show that the efficiency of techniques having logic circuits alternately connected to external supply and ground can drastically degrade when gate tunneling currents become significant.
  • Keywords
    "Gate leakage","Leakage current","Tunneling","Subthreshold current","Power dissipation","CMOS technology","Logic circuits","MOSFETs","Insulation","Electrons"
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2004. ISCAS ´04. Proceedings of the 2004 International Symposium on
  • Print_ISBN
    0-7803-8251-X
  • Type

    conf

  • DOI
    10.1109/ISCAS.2004.1329379
  • Filename
    1329379