DocumentCode :
3616275
Title :
Using modified GaAs FET model function for the accurate representation of PHEMTs and varactors
Author :
J. Dobes
Author_Institution :
Dept. of Radio Eng., Czech Tech. Univ., Prague, Czech Republic
Volume :
1
fYear :
2004
fDate :
6/26/1905 12:00:00 AM
Firstpage :
35
Abstract :
In the recent PSpice programs, several GaAs FET models of various classes have been implemented. However, some of them are sophisticated and therefore very difficult to measure and identify afterwards, especially the realistic model of Parker and Skellern. In the paper, simple enhancement of one of the standard models is proposed. The resulting modification is usable for the accurate modelling of both GaAs FETs and PHEMTs. Moreover, its updated capacitance function can serve as a precise representation of microwave varactors, which is more important.
Keywords :
"Gallium arsenide","FETs","PHEMTs","Varactors","Voltage","Differential equations","Capacitance","Circuit analysis","Frequency","Delay effects"
Publisher :
ieee
Conference_Titel :
Electrotechnical Conference, 2004. MELECON 2004. Proceedings of the 12th IEEE Mediterranean
Print_ISBN :
0-7803-8271-4
Type :
conf
DOI :
10.1109/MELCON.2004.1346765
Filename :
1346765
Link To Document :
بازگشت