• DocumentCode
    3616276
  • Title

    Lateral bipolar transistor´s extrinsic base design for better f/sub T/ vs BV/sub CEO/ solution

  • Author

    M. Koricic;P. Biljanovic;T. Suligoj

  • Author_Institution
    Fac. of Electr. Eng. & Comput., Zagreb Univ., Croatia
  • Volume
    1
  • fYear
    2004
  • fDate
    6/26/1905 12:00:00 AM
  • Firstpage
    39
  • Abstract
    In modern fast bipolar transistor design, high frequency performance and current operating level are traded off with breakdown voltages. Charge sharing between extrinsic and intrinsic base acceptors reduces the maximum electric field in the intrinsic transistor and improves BV/sub CEO/. Extrinsic base can be optimized and higher breakdown voltage can be obtained without severely degrading high frequency performance. This was shown by the simulation of the horizontal current bipolar transistor electrical characteristics.
  • Keywords
    "Bipolar transistors","Frequency","Current density","Degradation","Kirk field collapse effect","MOSFETs","Doping profiles","High performance computing","Electric breakdown","Circuits"
  • Publisher
    ieee
  • Conference_Titel
    Electrotechnical Conference, 2004. MELECON 2004. Proceedings of the 12th IEEE Mediterranean
  • Print_ISBN
    0-7803-8271-4
  • Type

    conf

  • DOI
    10.1109/MELCON.2004.1346766
  • Filename
    1346766
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3616276