• DocumentCode
    3616277
  • Title

    Drift-diffusion simulation of InSb devices

  • Author

    E. Sijercic;K. Mueller;B. Pejcinovic

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Portland State Univ., OR, USA
  • Volume
    1
  • fYear
    2004
  • fDate
    6/26/1905 12:00:00 AM
  • Firstpage
    43
  • Abstract
    A methodology for InSb devices in standard drift-diffusion simulators is presented. Material complexities, such as non-parabolicity, degeneracy, mobility and Auger recombination/generation are explained, and physics based models are developed. This methodology is then applied to the examination of low leakage room temperature InSb photodiodes.
  • Keywords
    "Semiconductor materials","Computational modeling","Photonic band gap","Electrons","Computer simulation","Temperature","Taylor series","Radiative recombination","Physics","Photodiodes"
  • Publisher
    ieee
  • Conference_Titel
    Electrotechnical Conference, 2004. MELECON 2004. Proceedings of the 12th IEEE Mediterranean
  • Print_ISBN
    0-7803-8271-4
  • Type

    conf

  • DOI
    10.1109/MELCON.2004.1346767
  • Filename
    1346767
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3616277