Title :
Electrical Conduction and Reliability in Dual-Layered Graphene Heterostructure Interconnects
Author :
Jain, Nikhil ; Murphy, Michael ; Jacobs-Gedrim, Robin ; Shanmugam, Mariyappan ; Fan Yang ; Eui Sang ; Bin Yu
Author_Institution :
Coll. of Nanoscale Sci. & Eng., SUNY - Univ. at Albany, Albany, NY, USA
Abstract :
Dual-layer graphene (DLG) interconnects with hexagonal boron nitride (h-BN) as intercalated insulating layer have been demonstrated. The DLG employs graphene grown by chemical vapor deposition process with h-BN serving as a barrier preventing interlayer scattering, which degrades carrier transport in multilayer graphene. The conductive behavior in dual-layer structures is compared with monolayer graphene and randomly stacked bilayer graphene. Reduced resistance is observed in DLG, which exhibits higher current-carrying capacity and maximum power density. In addition, DLG wire is shown to be robust under constant voltage stressing (10 V) at an elevated temperature (150°C) with the mean time to failure ~75 times higher than that of stacked bilayer graphene wires.
Keywords :
boron compounds; chemical vapour deposition; graphene; bilayer graphene; carrier transport; chemical vapor deposition; current-carrying capacity; dual-layer structures; dual-layered graphene heterostructure interconnects; electrical conduction; electrical reliability; maximum power density; monolayer graphene; multilayer graphene; temperature 150 C; voltage 10 V; Current density; Electric breakdown; Graphene; Reliability; Resistance; Wires; Graphene; conduction; heterostructure; heterostructure.; hexagonal boron nitride; interconnects;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2360815
