THz-Assisted Instantaneous Gain Switching in Quantum Dot Semiconductor Optical Amplifiers

Author

Alimohammadi, Farzin ; Yadipour, Reza ; Abbasian, Karim ; Baghban, Hamed

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Tabriz, Tabriz, Iran

Volume

27

Issue

3

fYear

2015

fDate

Feb.1, 1 2015

Firstpage

288

Lastpage

291

Abstract

A new concept of instantaneous gain switching in quantum dot semiconductor optical amplifier (QD-SOA) is introduced in this letter. Based on numerical modeling, instantaneous gain dynamics of a QD-SOA due to modulation of quantum confinement potential of quantum dots with applied terahertz (THz) electric field is described and gain clamping phenomenon is discussed. The proposed gain switching mechanism is promising for THz to optical wavelength conversion in THz communication scenarios.

Keywords

laser beams; optical communication equipment; optical modulation; optical wavelength conversion; quantum dot lasers; semiconductor optical amplifiers; semiconductor quantum dots; terahertz wave devices; QD-SOA; THz communication scenarios; THz to optical wavelength conversion; THz-assisted instantaneous gain switching; gain clamping phenomenon; gain switching mechanism; instantaneous gain dynamics; numerical modeling; quantum confinement potential modulation; quantum dot semiconductor optical amplifiers; terahertz electric field; Charge carrier processes; Gain; Optical polarization; Optical pulses; Optical saturation; Quantum dots; Ultrafast optics; Quantum dots; THz field; gain switching; quantum confined Stark effect;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2014.2369514

Filename

6953069