DocumentCode :
3618393
Title :
Dielectric lifetimeumited by statistics pre- and post-breakdown degradation
Author :
F. Monsieur
fYear :
2004
fDate :
6/26/1905 12:00:00 AM
Firstpage :
197
Lastpage :
197
Keywords :
"Statistics","Degradation","Thin film transistors","Electric breakdown","Physics","Dielectric breakdown","Microelectronics","Integrated circuit interconnections","Voltage","Materials reliability"
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2004 IEEE International
Print_ISBN :
0-7803-8517-9
Type :
conf
DOI :
10.1109/IRWS.2004.1422779
Filename :
1422779
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3618393
