DocumentCode :
3618858
Title :
Characterization of InP epitaxial layers for use in radiation detection
Author :
I. Zavadil;K. Zd´ansky;O. Prochazkova;H. Kozak
fYear :
2004
fDate :
6/26/1905 12:00:00 AM
Firstpage :
247
Lastpage :
250
Keywords :
"Indium phosphide","Epitaxial layers","Radiation detectors","Conductivity","Conducting materials","Temperature measurement","Impurities","Luminescence","Epitaxial growth","Cerium"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Print_ISBN :
0-7803-8335-7
Type :
conf
DOI :
10.1109/ASDAM.2004.1441207
Filename :
1441207
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3618858
