مرکز منطقه ای اطلاع رساني علوم و فناوري

DocumentCode :

3618859

Title :

Growth-rate induced defects in GaSb

Author :

D. Kindl;P. Hubik;J. Kristofik;J.J. Mares;E. Hulicius;J. Pangrac;K. Melichar;V. Jurka;Z. Vyborny;J. Touskova

fYear :

2004

fDate :

6/26/1905 12:00:00 AM

Firstpage :

259

Lastpage :

262

Keywords :

"P-n junctions","Epitaxial growth","Epitaxial layers","Substrates","Physics","Spectroscopy","Transient analysis","Molecular beam epitaxial growth","Mathematics","Phase measurement"

Publisher :

ieee

Conference_Titel :

Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on

Print_ISBN :

0-7803-8335-7

Type :

conf

DOI :

10.1109/ASDAM.2004.1441210

Filename :

1441210

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3618859