DocumentCode :
3618860
Title :
AlGaM MSM characterisation by the light beam induced current technique
Author :
B. Paszkiewicz;A. Szyszka;R. Paszkiewicz;M. Wosko;M. Tlaczala
fYear :
2004
fDate :
6/26/1905 12:00:00 AM
Firstpage :
275
Lastpage :
278
Keywords :
"Gallium nitride","Scanning electron microscopy","Spatial resolution","Testing","Substrates","Schottky barriers","Circuits","Optical polarization","Metallization","Photonics"
Publisher :
ieee
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2004. ASDAM 2004. The Fifth International Conference on
Print_ISBN :
0-7803-8335-7
Type :
conf
DOI :
10.1109/ASDAM.2004.1441214
Filename :
1441214
Link To Document :
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