A magnetic-field-sensitive multicollector transistor with low offset

This paper describes an exciting, new and fundamentally different approach to offset reduction which does not have many of the problems present in traditional offset-reduction techniques. It is based on the variation of the sensor´s sensitivity as a function of some variable parameter while the offset signal remains a constant function of the same parameter. Experiments performed on a magnetic-field-sensitive double-collector transistor confirm the usefulness of the offset reduction method: a 95% reduction in the original offset has been obtained. Furthermore, the main cause of offset in vertical magnetotransistors used in the experiments is analyzed theoretically as well as experimentally.