DocumentCode :
3619186
Title :
An analysis of a "dead layer" in the emitter of n/sup +/pp/sup +/ solar cells
Author :
P. Kittidachachan;T. Markvart;G.J. Ensell;R. Greef;D.M. Bagnall
Author_Institution :
Sch. of Eng. Sci., Southampton Univ., UK
fYear :
2005
fDate :
6/27/1905 12:00:00 AM
Firstpage :
1103
Lastpage :
1106
Abstract :
In this paper, the results obtained from fabrication and characterizations of n/sup +/pp/sup +/ solar cells are presented. The existence of a dead layer in the emitter was inferred regarding to the poor quantum efficiency of the cells under short wavelength region. The effects of this layer on the solar cell performance have been analyzed using the theoretical model and demonstrated in the term of low collection efficiency near the top surface of the emitter and high front surface recombination velocity.
Keywords :
"Photovoltaic cells","Doping","Temperature","Radiative recombination","Boron","Silicon","Computer science","Fabrication","Contact resistance","Substrates"
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488328
Filename :
1488328
Link To Document :
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