• DocumentCode
    3619186
  • Title

    An analysis of a "dead layer" in the emitter of n/sup +/pp/sup +/ solar cells

  • Author

    P. Kittidachachan;T. Markvart;G.J. Ensell;R. Greef;D.M. Bagnall

  • Author_Institution
    Sch. of Eng. Sci., Southampton Univ., UK
  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    1103
  • Lastpage
    1106
  • Abstract
    In this paper, the results obtained from fabrication and characterizations of n/sup +/pp/sup +/ solar cells are presented. The existence of a dead layer in the emitter was inferred regarding to the poor quantum efficiency of the cells under short wavelength region. The effects of this layer on the solar cell performance have been analyzed using the theoretical model and demonstrated in the term of low collection efficiency near the top surface of the emitter and high front surface recombination velocity.
  • Keywords
    "Photovoltaic cells","Doping","Temperature","Radiative recombination","Boron","Silicon","Computer science","Fabrication","Contact resistance","Substrates"
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-8707-4
  • Type

    conf

  • DOI
    10.1109/PVSC.2005.1488328
  • Filename
    1488328