DocumentCode
3619186
Title
An analysis of a "dead layer" in the emitter of n/sup +/pp/sup +/ solar cells
Author
P. Kittidachachan;T. Markvart;G.J. Ensell;R. Greef;D.M. Bagnall
Author_Institution
Sch. of Eng. Sci., Southampton Univ., UK
fYear
2005
fDate
6/27/1905 12:00:00 AM
Firstpage
1103
Lastpage
1106
Abstract
In this paper, the results obtained from fabrication and characterizations of n/sup +/pp/sup +/ solar cells are presented. The existence of a dead layer in the emitter was inferred regarding to the poor quantum efficiency of the cells under short wavelength region. The effects of this layer on the solar cell performance have been analyzed using the theoretical model and demonstrated in the term of low collection efficiency near the top surface of the emitter and high front surface recombination velocity.
Keywords
"Photovoltaic cells","Doping","Temperature","Radiative recombination","Boron","Silicon","Computer science","Fabrication","Contact resistance","Substrates"
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN
0160-8371
Print_ISBN
0-7803-8707-4
Type
conf
DOI
10.1109/PVSC.2005.1488328
Filename
1488328
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