• DocumentCode
    3619270
  • Title

    Thermal Simulation of and Characterization of AlGaN/GaN/Si High Electron Mobility Transistors

  • Author

    G. Hanreich;S. Bychikhin;D. Pogany;M. Marso;P. Kordos;J. Nicolics

  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    15
  • Lastpage
    16
  • Keywords
    "Aluminum gallium nitride","Gallium nitride","HEMTs","MODFETs","Temperature","Thermal loading","Thermal resistance","Electronic packaging thermal management","Thin film transistors","Thin film sensors"
  • Publisher
    ieee
  • Conference_Titel
    Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2005. 28th International Spring Seminar on
  • Print_ISBN
    0-7803-9325-2
  • Type

    conf

  • DOI
    10.1109/ISSE.2005.1490990
  • Filename
    1490990
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619270