DocumentCode :
3619276
Title :
Active gate drivers
Author :
D. Sobczynski
Author_Institution :
Dept. of Power Electron. & Power Eng., Rzeszow Univ. of Technol.
fYear :
2005
fDate :
6/27/1905 12:00:00 AM
Firstpage :
236
Lastpage :
239
Abstract :
Switching power supplies have become the norm in almost all electronic systems. The switchers´ excellent line and load regulation, high conversion efficiency, and compactness all contribute to their popularity. Low-loss power MOSFETs and IGBTs (insulated-gate bipolar transistors), coupled with low-drop rectifiers, are at the heart of these switching supplies. The subject of driving MOSFETs/IGBTs to their highest possible frequencies at the highest possible power levels, still providing protection, is multi-dimensional and requires knowledge of MOSFETs and IGBTs as well as circuit theory and how it applies to this discipline. Many topologies in high voltage converter, inverter and matrix converter applications require special techniques to drive MOSFETs and IGBTs
Keywords :
"Insulated gate bipolar transistors","MOSFETs","Matrix converters","Driver circuits","Power supplies","Insulation","Coupling circuits","Rectifiers","Heart","Frequency"
Publisher :
ieee
Conference_Titel :
Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2005. 28th International Spring Seminar on
Print_ISBN :
0-7803-9325-2
Type :
conf
DOI :
10.1109/ISSE.2005.1491033
Filename :
1491033
Link To Document :
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