• DocumentCode
    3619276
  • Title

    Active gate drivers

  • Author

    D. Sobczynski

  • Author_Institution
    Dept. of Power Electron. & Power Eng., Rzeszow Univ. of Technol.
  • fYear
    2005
  • fDate
    6/27/1905 12:00:00 AM
  • Firstpage
    236
  • Lastpage
    239
  • Abstract
    Switching power supplies have become the norm in almost all electronic systems. The switchers´ excellent line and load regulation, high conversion efficiency, and compactness all contribute to their popularity. Low-loss power MOSFETs and IGBTs (insulated-gate bipolar transistors), coupled with low-drop rectifiers, are at the heart of these switching supplies. The subject of driving MOSFETs/IGBTs to their highest possible frequencies at the highest possible power levels, still providing protection, is multi-dimensional and requires knowledge of MOSFETs and IGBTs as well as circuit theory and how it applies to this discipline. Many topologies in high voltage converter, inverter and matrix converter applications require special techniques to drive MOSFETs and IGBTs
  • Keywords
    "Insulated gate bipolar transistors","MOSFETs","Matrix converters","Driver circuits","Power supplies","Insulation","Coupling circuits","Rectifiers","Heart","Frequency"
  • Publisher
    ieee
  • Conference_Titel
    Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2005. 28th International Spring Seminar on
  • Print_ISBN
    0-7803-9325-2
  • Type

    conf

  • DOI
    10.1109/ISSE.2005.1491033
  • Filename
    1491033