Title :
Nonlinear microscopic fluctuators in Ru-based thick film resistors
Author :
A. Kolek;P. Ptak;Z. Zawislak
Author_Institution :
Dept. of Electron. Fundamentals, Rzeszow Univ. of Technol.
fDate :
6/27/1905 12:00:00 AM
Abstract :
The paper concerns low-frequency noise of RuO2+glass thick film resistors. Recent experiments performed in liquid helium temperatures indicate that at large bias the noise become nonlinear, that is its power spectral density SVex does not scale with voltage V like V2. In the paper efforts were undertaken to explain this behavior. Data are analyzed in terms of self heating of the resistors by the driving current. It is demonstrated that normalized noise powers SVex/V2, measured at the same electron temperature but various voltages, are different. We conclude that the normalized noise is voltage dependent i.e. nonlinear. The second argument comes from room temperature measurements. Resistors excited by sine waves of various amplitudes and frequencies exhibit both 1/Deltaf and 1/f noises. Arguments are supplied that this is a fingerprint of nonlinear microscopic conduction mechanism, which means the local current (i) is nonlinear function of local voltage (v). General conclusion is that microscopic noise sources responsible for low-frequency noise in RuO2+glass resistors are nonlinear, that is they have nonlinear i(v) and Sv(v2) dependencies. At room temperature the number of active fluctuators is large. Local voltages take on small values and the overall noise SVex is linear i.e. ~ V2. Nonlinear, asymmetric i(v) curves under ac bias induce a net small DC current and as a result the "ac-induced" 1/f noise. At liquid helium temperatures many fluctuators are frozen. Local voltages take on large values and the overall noise SVex probes the whole microscopic (nonlinear) S v(v2) characteristics
Keywords :
"Microscopy","Thick films","Resistors","Voltage","Low-frequency noise","Temperature","Helium","Data analysis","Heating","Noise measurement"
Conference_Titel :
Electronics Technology: Meeting the Challenges of Electronics Technology Progress, 2005. 28th International Spring Seminar on
Print_ISBN :
0-7803-9325-2
DOI :
10.1109/ISSE.2005.1491058