DocumentCode :
3619438
Title :
High-Frequency Small-Signal and Large-Signal Characteristics of Resonant Tunneling High Electron Mobility Transistors
Author :
K.J. Chen;K. Maezawa;M. Yamamoto
Author_Institution :
City University of Hong Kong
fYear :
1997
fDate :
6/19/1905 12:00:00 AM
Firstpage :
300
Lastpage :
303
Keywords :
"Resonant tunneling devices","HEMTs","MODFETs","Transconductance","Length measurement","Cutoff frequency","Scattering parameters","Temperature","Voltage","Hysteresis"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194425
Filename :
1503355
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619438
