Investigations on the Internal Physical Behaviour of 600V Punch-Through IGBT under Latch-up at High Temperature

Author

S. Azzopardi;J.-M. Vinassa;C. Zardini

Author_Institution

Universite de Bordeaux I, France

fYear

1997

fDate

6/19/1905 12:00:00 AM

Firstpage

616

Lastpage

619

Keywords

"Insulated gate bipolar transistors","Temperature"

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1997. Proceeding of the 27th European

Print_ISBN

2-86332-221-4

Type

DOI

10.1109/ESSDERC.1997.194504

Filename

1503434

Link To Document