Title :
Investigations on the Internal Physical Behaviour of 600V Punch-Through IGBT under Latch-up at High Temperature
Author :
S. Azzopardi;J.-M. Vinassa;C. Zardini
Author_Institution :
Universite de Bordeaux I, France
fDate :
6/19/1905 12:00:00 AM
Keywords :
"Insulated gate bipolar transistors","Temperature"
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
DOI :
10.1109/ESSDERC.1997.194504
