DocumentCode :
3619443
Title :
Advanced self aligned SOI concepts for vertical MOS transistors with ultrashort channel lengths
Author :
Th. Aeugle;L. Risch;W. Rosner;Th. Schulz;D. Behammer
Author_Institution :
Siemens AG, Germany
fYear :
1997
fDate :
6/19/1905 12:00:00 AM
Firstpage :
628
Lastpage :
631
Keywords :
"MOSFETs","Lithography","Parasitic capacitance","Doping","CMOS technology","Threshold voltage","Substrates","Availability","Production","CMOS logic circuits"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194507
Filename :
1503437
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619443
