• DocumentCode
    3619446
  • Title

    New parameter extraction method for the simulation of the space charge created by Fowler-Nordheim electron injections in the gate oxide of MOS devices

  • Author

    G. Auriel;J.P. Dubuc;B. Sagnes;J. Oualid;G. Ghibaudo;P. Boivin

  • Author_Institution
    ENSPM, France
  • fYear
    1997
  • fDate
    6/19/1905 12:00:00 AM
  • Firstpage
    640
  • Lastpage
    643
  • Keywords
    "Parameter extraction","Space charge","MOS devices","Electron traps","Microelectronics","Nonvolatile memory","Substrates","MOS capacitors","Occupational stress","Integrated circuit reliability"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194510
  • Filename
    1503440
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619446