مرکز منطقه ای اطلاع رساني علوم و فناوري - Analysis of Capacitance Behavior for Short-Channel Accumulation-Mode SOI PMOS Devices

DocumentCode :

3619454

Title :

Analysis of Capacitance Behavior for Short-Channel Accumulation-Mode SOI PMOS Devices

Author :

J.B. Kuo;K.W. Su

Author_Institution :

National Taiwan University, Taiwan

fYear :

1997

fDate :

6/19/1905 12:00:00 AM

Firstpage :

672

Lastpage :

675

Keywords :

"Capacitance","MOS devices","Transistors","Analytical models","Voltage","Substrates","Silicon","Semiconductor thin films","Thin film devices"

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 1997. Proceeding of the 27th European

Print_ISBN :

2-86332-221-4

Type :

conf

DOI :

10.1109/ESSDERC.1997.194518

Filename :

1503448

Link To Document :