• DocumentCode
    3619460
  • Title

    On the determination of the time-dependent degradation laws in deep submicron SOI MOSFETs

  • Author

    S.H. Renn;J.L. Pelloie;F. Balestra

  • Author_Institution
    LPCS (UMR CNRS), ENSERG-INPG, France
  • fYear
    1997
  • fDate
    6/19/1905 12:00:00 AM
  • Firstpage
    696
  • Lastpage
    699
  • Keywords
    "Degradation","MOSFETs","Stress","Extrapolation","Prediction methods","Hot carriers","MOS devices","Hot carrier effects","Silicon","Semiconductor films"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194524
  • Filename
    1503454
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619460