• DocumentCode
    3619462
  • Title

    HBM and CDM ESD stress test results in 0.6 um CMOS structures

  • Author

    G. Meneghesso;N. Grapputo;P. Colombo;M. Brambilla;P. Pavan;E. Zanoni

  • Author_Institution
    University of Padova, Italy
  • fYear
    1997
  • fDate
    6/19/1905 12:00:00 AM
  • Firstpage
    704
  • Lastpage
    707
  • Keywords
    "Electrostatic discharge","Stress","Testing","Robustness","Bipolar transistors","Protection","MOSFETs","Failure analysis","Scanning electron microscopy","Pulse measurements"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194526
  • Filename
    1503456
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619462