DocumentCode :
3619462
Title :
HBM and CDM ESD stress test results in 0.6 um CMOS structures
Author :
G. Meneghesso;N. Grapputo;P. Colombo;M. Brambilla;P. Pavan;E. Zanoni
Author_Institution :
University of Padova, Italy
fYear :
1997
fDate :
6/19/1905 12:00:00 AM
Firstpage :
704
Lastpage :
707
Keywords :
"Electrostatic discharge","Stress","Testing","Robustness","Bipolar transistors","Protection","MOSFETs","Failure analysis","Scanning electron microscopy","Pulse measurements"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194526
Filename :
1503456
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619462
