DocumentCode :
3619463
Title :
High Frequency Analysis of InP Transistors versus Temperature
Author :
F. Aniel;N. Zerounian;A. Almeyda;V. Danelon;G. Vernet;P. Crozat;R. Adde;J.-C. Harmand;C. Ladner
Author_Institution :
University Paris-South, France
fYear :
1997
fDate :
6/19/1905 12:00:00 AM
Firstpage :
708
Lastpage :
711
Keywords :
"Frequency","Indium phosphide","Hafnium","HEMTs","Temperature dependence","Equivalent circuits","Roentgenium","Microwave devices","Cryogenics","Performance evaluation"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194527
Filename :
1503457
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619463
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