DocumentCode :
3619465
Title :
A Novel Functional Heterostructure-Emitter and Hereostructure-Base Transistor (HEHBT)
Author :
W.-C. Liu;J.-H. Tsai;S.-Y. Cheng;P.-H. Lin;W.-C. Wang;J.-Y. Chen
Author_Institution :
National Cheng-Kung University, Taiwan
fYear :
1997
fDate :
6/19/1905 12:00:00 AM
Firstpage :
716
Lastpage :
719
Keywords :
"Gallium arsenide","Indium gallium arsenide","Logic circuits","Voltage","Molecular beam epitaxial growth","Bipolar transistors","Quantum well devices","Electrons","P-n junctions","Charge carrier processes"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194529
Filename :
1503459
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619465
