• DocumentCode
    3619470
  • Title

    The Oxidized Amorphous Silicon Improved LOCal Isolation (OASI-LOCI) concept

  • Author

    S. Deleonibus;M. Heitzmann;F. Martin;J.-C. Guibert

  • Author_Institution
    LETI/CEA, Grenoble, France
  • fYear
    1997
  • fDate
    6/19/1905 12:00:00 AM
  • Firstpage
    736
  • Lastpage
    739
  • Keywords
    "Amorphous silicon","Oxidation","Amorphous materials","Shape","Temperature","Etching","Electric variables measurement","Transconductance","Surfaces","Absorption"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194534
  • Filename
    1503464
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619470