DocumentCode :
3619470
Title :
The Oxidized Amorphous Silicon Improved LOCal Isolation (OASI-LOCI) concept
Author :
S. Deleonibus;M. Heitzmann;F. Martin;J.-C. Guibert
Author_Institution :
LETI/CEA, Grenoble, France
fYear :
1997
fDate :
6/19/1905 12:00:00 AM
Firstpage :
736
Lastpage :
739
Keywords :
"Amorphous silicon","Oxidation","Amorphous materials","Shape","Temperature","Etching","Electric variables measurement","Transconductance","Surfaces","Absorption"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1997. Proceeding of the 27th European
Print_ISBN :
2-86332-221-4
Type :
conf
DOI :
10.1109/ESSDERC.1997.194534
Filename :
1503464
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619470
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