• DocumentCode
    3619472
  • Title

    As and B Diffusion in TiSi2/Polysilicon Gates with Dual Workfunction Gate Technology

  • Author

    A. Berthold;E. Hammerl;H. von Philipsborn

  • Author_Institution
    Siemens Corporate Technology, Germany and University of Regensburg, Germany
  • fYear
    1997
  • fDate
    6/19/1905 12:00:00 AM
  • Firstpage
    744
  • Lastpage
    747
  • Keywords
    "Annealing","Testing","Furnaces","MOSFETs","Atomic layer deposition","CMOS technology","Hardware","CMOS process","Threshold voltage","MOS devices"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1997. Proceeding of the 27th European
  • Print_ISBN
    2-86332-221-4
  • Type

    conf

  • DOI
    10.1109/ESSDERC.1997.194536
  • Filename
    1503466
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619472