DocumentCode :
3619478
Title :
Ledge-Thickness of InGaP Passivation-Layer on InGaP/GaAs Delta-Doped Single HBT´s
Author :
W.-S. Lour;J.L. Hsieh;C.Y. Lia
Author_Institution :
National Taiwan-Ocean University, Keelung, Taiwan
fYear :
1998
fDate :
6/20/1905 12:00:00 AM
Firstpage :
528
Lastpage :
531
Keywords :
"Gallium arsenide","Heterojunction bipolar transistors","Passivation","Etching","Fabrication","Substrates","Current measurement","Voltage","RNA","Degradation"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Print_ISBN :
2-86332-234-6
Type :
conf
Filename :
1503605
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619478
