• DocumentCode
    3619479
  • Title

    A New InGaP/GaAs Superlattice-Emitter Resonant Tunneling Bipolar Transistor (SE-RTBT)

  • Author

    W.-C. Liu;S.-Y. Cheng;W.-L. Chang;H.-J. Pan;Y.-H. Shie

  • Author_Institution
    National Cheng Kung University, Tainan, Taiwan
  • fYear
    1998
  • fDate
    6/20/1905 12:00:00 AM
  • Firstpage
    532
  • Lastpage
    535
  • Keywords
    "Gallium arsenide","Resonant tunneling devices","Bipolar transistors","Superlattices","Temperature","Etching","Carrier confinement","Voltage","Conducting materials","Fabrication"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1998. Proceeding of the 28th European
  • Print_ISBN
    2-86332-234-6
  • Type

    conf

  • Filename
    1503606
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619479