DocumentCode :
3619479
Title :
A New InGaP/GaAs Superlattice-Emitter Resonant Tunneling Bipolar Transistor (SE-RTBT)
Author :
W.-C. Liu;S.-Y. Cheng;W.-L. Chang;H.-J. Pan;Y.-H. Shie
Author_Institution :
National Cheng Kung University, Tainan, Taiwan
fYear :
1998
fDate :
6/20/1905 12:00:00 AM
Firstpage :
532
Lastpage :
535
Keywords :
"Gallium arsenide","Resonant tunneling devices","Bipolar transistors","Superlattices","Temperature","Etching","Carrier confinement","Voltage","Conducting materials","Fabrication"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Print_ISBN :
2-86332-234-6
Type :
conf
Filename :
1503606
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619479
