DocumentCode :
3619482
Title :
Impact of constant current stressing procedure on Stress Induced Leakage current generation in thin oxides
Author :
P. Riess;G. Ghibaudo;G. Pananakakis;J. Brini;G. Ghidini
Author_Institution :
LPCS/ENSERG/INPG, Grenoble, France
fYear :
1998
fDate :
6/20/1905 12:00:00 AM
Firstpage :
544
Lastpage :
547
Keywords :
"Leakage current","Delay effects","Stress measurement","Time measurement","Electrons","Carbon capture and storage","Microelectronics","CMOS technology","Current measurement","Thickness measurement"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Print_ISBN :
2-86332-234-6
Type :
conf
Filename :
1503609
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619482
