DocumentCode
3619487
Title
A Comparative Study of Anneal Efficiencies of Deuterium and Hydrogen in Plasma-Processed Transistors
Author
S. Ashok;S. Rangan;S. Krishnan
Author_Institution
The Pennsylvania State University, University Park, United States
fYear
1998
fDate
6/20/1905 12:00:00 AM
Firstpage
564
Lastpage
567
Keywords
"Annealing","Deuterium","Hydrogen","Plasma devices","Plasma materials processing","Frequency","Threshold voltage","Plasma sources","Plasma temperature","MOSFETs"
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Print_ISBN
2-86332-234-6
Type
conf
Filename
1503614
Link To Document