3619487

A Comparative Study of Anneal Efficiencies of Deuterium and Hydrogen in Plasma-Processed Transistors

S. Ashok;S. Rangan;S. Krishnan

The Pennsylvania State University, University Park, United States

1998

6/20/1905 12:00:00 AM

564

567

"Annealing","Deuterium","Hydrogen","Plasma devices","Plasma materials processing","Frequency","Threshold voltage","Plasma sources","Plasma temperature","MOSFETs"

ieee

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

2-86332-234-6

conf

1503614