• DocumentCode
    3619496
  • Title

    Impact of Premetal process on the 0.25 um device performances

  • Author

    N.H. Loof;K. Barla;B. Descouts;J. Geulen;C. Verove;M. Ada-Hanifi

  • Author_Institution
    Philips Semiconductors, Netherlands
  • fYear
    1998
  • fDate
    6/20/1905 12:00:00 AM
  • Firstpage
    600
  • Lastpage
    603
  • Keywords
    "Etching","Silicon","Boron","Integrated circuit interconnections","Chemistry","MOSFET circuits","Degradation","Telecommunications","Logic circuits","Chemical technology"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1998. Proceeding of the 28th European
  • Print_ISBN
    2-86332-234-6
  • Type

    conf

  • Filename
    1503623
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619496