DocumentCode :
3619500
Title :
Channel Coupling and Edge Effect Imposed Trade-offs on Fully-Depleted (FD) SOI MOSFET´s
Author :
D.E. Ioannou;F.L. Duan;W.C. Jenkins;H.L. Hughes
Author_Institution :
George Mason University, Fairfax, VA, United States
fYear :
1998
fDate :
6/20/1905 12:00:00 AM
Firstpage :
616
Lastpage :
619
Keywords :
"MOSFET circuits","Voltage","Hot carriers","Degradation","Doping profiles","Impact ionization","Substrates","Numerical simulation","Silicon","Semiconductor films"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Print_ISBN :
2-86332-234-6
Type :
conf
Filename :
1503627
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619500
