DocumentCode :
3619510
Title :
Using the Self Aligned Field Implant to Design High Voltage Devices in Sub- µm CMOS Technologies
Author :
M. Vermandel;J. Doutreloigne;P. Moens;M. Tack
Author_Institution :
University of Gent, Belgium
fYear :
2000
fDate :
6/22/1905 12:00:00 AM
Firstpage :
228
Lastpage :
231
Keywords :
"CMOS technology","Implants","Electric breakdown","Diodes","Microelectronics","Breakdown voltage","CMOS process","Doping","Low voltage","Automotive engineering"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194756
Filename :
1503686
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619510
