• DocumentCode
    3619513
  • Title

    Temperature-Dependent Character istics of a Novel InP/InGaAlAs Heterojunction Bipolar Transistor

  • Author

    W.C. Liu;H.J. Pan;W.C. Wang;C.C. Cheng;S.C. Feng;C.H. Yen;K.W. Lin

  • Author_Institution
    National Cheng-Kung University, Tainan, Taiwan
  • fYear
    2000
  • fDate
    6/22/1905 12:00:00 AM
  • Firstpage
    240
  • Lastpage
    243
  • Keywords
    "Indium phosphide","Heterojunction bipolar transistors","Temperature dependence","Indium gallium arsenide","Photonic band gap","Electrons","Atomic layer deposition","Conducting materials","Low voltage","Power dissipation"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194759
  • Filename
    1503689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619513