• DocumentCode
    3619514
  • Title

    A Novel Functional Negative-Differential-Resistance Heterojunction Bipolar Transistor (NDR-HBT)

  • Author

    W.C. Liu;W.C. Wang;H.J. Pan;C.C. Cheng;S.C. Feng;C.H. Yen;K.W. Lin

  • Author_Institution
    National Cheng-Kung University, Tainan, Taiwan
  • fYear
    2000
  • fDate
    6/22/1905 12:00:00 AM
  • Firstpage
    244
  • Lastpage
    247
  • Keywords
    "Heterojunction bipolar transistors","Indium phosphide","Light sources","HEMTs","MODFETs","Sheet materials","Substrates","Current-voltage characteristics","Tungsten","Photoconductivity"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194760
  • Filename
    1503690