DocumentCode :
3619515
Title :
A Comparison of PNP and NPN SiGe Heterojunction Bipolar Transistors Fabricated by Ge(+)-implantation
Author :
M. Mitchell;P. Ashburn;H. Graoui;P.L.F. Hemment;A. Lamb;S. Hall;S. Nigrin
Author_Institution :
University of Southampton, UK
fYear :
2000
fDate :
6/22/1905 12:00:00 AM
Firstpage :
248
Lastpage :
251
Keywords :
"Silicon germanium","Germanium silicon alloys","Heterojunction bipolar transistors","Implants","Annealing","Boron","Acceleration","Circuits","Semiconductor process modeling","Analytical models"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194761
Filename :
1503691
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619515
