DocumentCode
3619518
Title
Optimisation of a Pre-Metal-Dielectric with a contact etch stop layer for 0.18um and 0.13um technologies
Author
B. De Jaeger;G. Van den bosch;M. Van Hove;I. Debusschere;M. Schaekers;G. Badenes
Author_Institution
IMEC, Leuven, Belgium
fYear
2000
fDate
6/22/1905 12:00:00 AM
Firstpage
260
Lastpage
263
Keywords
"Etching","Silicon","Hot carriers","Plasma temperature","Plasma applications","Plasma devices","Contamination","Silicides","Degradation","Stress"
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN
2-86332-248-6
Type
conf
DOI
10.1109/ESSDERC.2000.194764
Filename
1503694
Link To Document