مرکز منطقه ای اطلاع رساني علوم و فناوري - Optimisation of a Pre-Metal-Dielectric with a contact etch stop layer for 0.18um and 0.13um technologies

DocumentCode :

3619518

Title :

Optimisation of a Pre-Metal-Dielectric with a contact etch stop layer for 0.18um and 0.13um technologies

Author :

B. De Jaeger;G. Van den bosch;M. Van Hove;I. Debusschere;M. Schaekers;G. Badenes

Author_Institution :

IMEC, Leuven, Belgium

fYear :

2000

fDate :

6/22/1905 12:00:00 AM

Firstpage :

260

Lastpage :

263

Keywords :

"Etching","Silicon","Hot carriers","Plasma temperature","Plasma applications","Plasma devices","Contamination","Silicides","Degradation","Stress"

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

Print_ISBN :

2-86332-248-6

Type :

conf

DOI :

10.1109/ESSDERC.2000.194764

Filename :

1503694

Link To Document :