• DocumentCode
    3619521
  • Title

    Dose Loss and Defect Mechanisms in Antimony Buried Layers for a 0.35um BiCMOS Process

  • Author

    A. Deignan;D. McAuliffe;D. Doyle;K. Moloney;M. Roche;M. O´Neill

  • Author_Institution
    Analog Devices, Limerick, Ireland
  • fYear
    2000
  • fDate
    6/22/1905 12:00:00 AM
  • Firstpage
    272
  • Lastpage
    275
  • Keywords
    "BiCMOS integrated circuits","Stacking","Capacitance","Oxidation","Silicon","Etching","Failure analysis","Analytical models","Solids","Density measurement"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194767
  • Filename
    1503697
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619521