DocumentCode :
3619521
Title :
Dose Loss and Defect Mechanisms in Antimony Buried Layers for a 0.35um BiCMOS Process
Author :
A. Deignan;D. McAuliffe;D. Doyle;K. Moloney;M. Roche;M. O´Neill
Author_Institution :
Analog Devices, Limerick, Ireland
fYear :
2000
fDate :
6/22/1905 12:00:00 AM
Firstpage :
272
Lastpage :
275
Keywords :
"BiCMOS integrated circuits","Stacking","Capacitance","Oxidation","Silicon","Etching","Failure analysis","Analytical models","Solids","Density measurement"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194767
Filename :
1503697
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619521
بازگشت