Title :
Plasma Damage Impact in 0.25 um Dual-Gate Technology
Author :
G. Ghidini;F. Pellizzer;N. Galbiati;D. Brazzelli;D. Peschiaroli;L. Brusaferri
Author_Institution :
STMicroelectronics, Agrate Brianza, Italy
fDate :
6/22/1905 12:00:00 AM
Keywords :
"Plasmas","Implants","Degradation","Annealing","Electric breakdown","Conductivity","Stress","Capacitors"
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
DOI :
10.1109/ESSDERC.2000.194768
