• DocumentCode
    3619530
  • Title

    MOS Memory Using Silicon Nanocrystals Formed by Very-Low Energy Ion Implantation

  • Author

    E. Kapetanakis;P. Normand;D. Tsoukalas;G. Kamoulakos;D. Kouvatsos;J. Stoemenos;S. Zhang;J. van den Berg;D.G. Armour

  • Author_Institution
    NCSR Demokritos, Aghia Paraskevi, Greece
  • fYear
    2000
  • fDate
    6/22/1905 12:00:00 AM
  • Firstpage
    476
  • Lastpage
    479
  • Keywords
    "Silicon","Nanocrystals","Ion implantation","Annealing","Fabrication","Nonvolatile memory","Nitrogen","Physics","MOSFET circuits","Tunneling"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194818
  • Filename
    1503748
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619530