DocumentCode :
3619532
Title :
Determination of the Recombination Lifetime in the Space Charge Region of MOS Field-Induced PN Junctions
Author :
R. Sorge;B. Heinemann;J. Grabmeier;G. Obermeier;H. Richter
Author_Institution :
IHP, Frankfurt (Oder), Germany
fYear :
2000
fDate :
6/22/1905 12:00:00 AM
Firstpage :
484
Lastpage :
487
Keywords :
"Space charge","Pollution measurement","Current measurement","Capacitance measurement","Frequency measurement","Current-voltage characteristics","Voltage","Contamination","Energy states","Energy measurement"
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2000. Proceeding of the 30th European
Print_ISBN :
2-86332-248-6
Type :
conf
DOI :
10.1109/ESSDERC.2000.194820
Filename :
1503750
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3619532