3619533

On the Characterisation of ALCVD ZrO2; Electrical and Structural Properties

E.W.A. Young;W.F.A. Besling

Philips Research Laboratories, Eindhoven, The Netherlands

2000

6/22/1905 12:00:00 AM

488

491

"High K dielectric materials","Silicon","Hafnium","High-K gate dielectrics","Dielectric substrates","Annealing","Leakage current","Zirconium","Performance analysis","Laboratories"

ieee

Solid-State Device Research Conference, 2000. Proceeding of the 30th European

2-86332-248-6

conf

10.1109/ESSDERC.2000.194821

1503751