• DocumentCode
    3619537
  • Title

    Simulation of Polysilicon Emitter Bipolar Transistors

  • Author

    V. Palankovski;T. Grasser;M. Knaipp;S. Selberherr

  • Author_Institution
    Vienna University of Technology, Austria
  • fYear
    2000
  • fDate
    6/22/1905 12:00:00 AM
  • Firstpage
    608
  • Lastpage
    611
  • Keywords
    "Bipolar transistors","Microelectronics","CMOS technology","Silicon","Chemical technology","Boron","Diffusion processes","Doping profiles","Semiconductor process modeling","Power system modeling"
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 2000. Proceeding of the 30th European
  • Print_ISBN
    2-86332-248-6
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2000.194851
  • Filename
    1503781
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3619537